PESD12VU1UT vs PESD12VU1UT feature comparison

PESD12VU1UT NXP Semiconductors

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PESD12VU1UT Nexperia

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS NEXPERIA
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer NXP Nexperia
Breakdown Voltage-Max 16.7 V 16.7 V
Breakdown Voltage-Min 14.2 V 14.2 V
Breakdown Voltage-Nom 15 V
Clamping Voltage-Max 39 V
Configuration COMMON ANODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 200 W 200 W
Number of Elements 2 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 3 3
Date Of Intro 2017-02-01
Operating Temperature-Min -65 °C
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5