PESD12VV1BL,315 vs PESD5V0L1BA,135 feature comparison

PESD12VV1BL,315 NXP Semiconductors

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PESD5V0L1BA,135 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code DFN SOD
Package Description ULTRA SMALL, LEADLESS, PLASTIC, DFN1006-2, 2 PIN
Pin Count 2 2
Manufacturer Package Code SOD882 SOD323
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 16.8 V 8.2 V
Breakdown Voltage-Min 14.6 V 7 V
Breakdown Voltage-Nom 15.7 V 7.6 V
Clamping Voltage-Max 38 V 33 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PBCC-N2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 290 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max 12 V 5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN TIN
Terminal Form NO LEAD FLAT
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 2 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW CAPACITANCE
Reverse Current-Max 1 µA
Reverse Test Voltage 5 V

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