PESD5V0L1BA
vs
PESD12VV1BL
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
NEXPERIA
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Breakdown Voltage-Nom |
7.6 V
|
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Rep Pk Reverse Voltage-Max |
5 V
|
12 V
|
Surface Mount |
YES
|
YES
|
Base Number Matches |
3
|
2
|
Package Description |
|
DFN1006-2, 2 PIN
|
Date Of Intro |
|
2017-02-01
|
Samacsys Manufacturer |
|
Nexperia
|
Breakdown Voltage-Max |
|
16.8 V
|
Breakdown Voltage-Min |
|
14.6 V
|
Configuration |
|
SINGLE
|
Diode Element Material |
|
SILICON
|
JESD-30 Code |
|
R-PBCC-N2
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Non-rep Peak Rev Power Dis-Max |
|
290 W
|
Number of Elements |
|
1
|
Number of Terminals |
|
2
|
Operating Temperature-Max |
|
150 °C
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5
|
Technology |
|
AVALANCHE
|
Terminal Finish |
|
TIN
|
Terminal Form |
|
NO LEAD
|
Terminal Position |
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare PESD12VV1BL with alternatives