PESD5V0S1BL315
vs
PESD5V0S1BL,315
feature comparison
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Transferred
|
| Ihs Manufacturer |
|
NXP SEMICONDUCTORS
|
| Part Package Code |
|
DFN
|
| Package Description |
|
1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC PACKAGE-2
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD882
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
LOW CAPACITANCE
|
| Breakdown Voltage-Max |
|
9.5 V
|
| Breakdown Voltage-Min |
|
5.5 V
|
| Breakdown Voltage-Nom |
|
7.5 V
|
| Clamping Voltage-Max |
|
14 V
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Diode Type |
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
|
R-PBCC-N2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Peak Rev Power Dis-Max |
|
130 W
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity |
|
BIDIRECTIONAL
|
| Qualification Status |
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
|
5 V
|
| Surface Mount |
|
YES
|
| Technology |
|
AVALANCHE
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Base Number Matches |
|
2
|
|
|
|
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