PTVS26VP1UP vs PTVS51VP1UP feature comparison

PTVS26VP1UP NXP Semiconductors

Buy Now Datasheet

PTVS51VP1UP NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 31.9 V 62.7 V
Breakdown Voltage-Min 28.9 V 56.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321 AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Rep Pk Reverse Voltage-Max 26 V 51 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 2

Compare PTVS26VP1UP with alternatives

Compare PTVS51VP1UP with alternatives