PTVS58VP1UP
vs
PTVS7V0P1UP
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-F2
|
PLASTIC PACKAGE-2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
71.2 V
|
8.6 V
|
| Breakdown Voltage-Min |
64.4 V
|
7.78 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-F2
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
600 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
|
AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
|
| Rep Pk Reverse Voltage-Max |
58 V
|
7 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Pure Tin (Sn)
|
Tin (Sn)
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
2
|
| JESD-609 Code |
|
e3
|
|
|
|
Compare PTVS58VP1UP with alternatives
Compare PTVS7V0P1UP with alternatives