PTVS7V5P1UP vs PTVS43VP1UP feature comparison

PTVS7V5P1UP NXP Semiconductors

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PTVS43VP1UP NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-2 R-PDSO-F2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 9.21 V 52.8 V
Breakdown Voltage-Min 8.33 V 47.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321 AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321
Rep Pk Reverse Voltage-Max 7.5 V 43 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 2

Compare PTVS7V5P1UP with alternatives

Compare PTVS43VP1UP with alternatives