RS1DLWHRVG vs 1N4003FL feature comparison

RS1DLWHRVG Taiwan Semiconductor

Buy Now Datasheet

1N4003FL Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature LOW POWER LOSS LOW LEAKAGE CURRENT
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.15 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 1
Application GENERAL PURPOSE
Forward Voltage-Max (VF) 1 V
Reverse Current-Max 5 µA
Reverse Test Voltage 200 V

Compare RS1DLWHRVG with alternatives

Compare 1N4003FL with alternatives