S2301
vs
MSC080SMA120S
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROHM CO LTD
|
MICROSEMI CORP
|
| Package Description |
UNCASED CHIP, X-XXUC-N
|
TO-268, D3PAK-3/2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
| Drain Current-Max (ID) |
40 A
|
35 A
|
| Drain-source On Resistance-Max |
0.111 Ω
|
0.1 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
X-XXUC-N
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
UNSPECIFIED
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
87 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
UNSPECIFIED
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
| Base Number Matches |
1
|
2
|
| Date Of Intro |
|
2020-01-29
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
| Case Connection |
|
DRAIN
|
| JEDEC-95 Code |
|
TO-268AA
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
182 W
|
|
|
|
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