S29GL256S10FHAV13
vs
S29GL256S10FHAV10
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
CYPRESS SEMICONDUCTOR CORP
|
Package Description |
LBGA,
|
LBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Date Of Intro |
2017-05-03
|
2017-05-03
|
Access Time-Max |
100 ns
|
100 ns
|
Boot Block |
BOTTOM/TOP
|
BOTTOM/TOP
|
JESD-30 Code |
R-PBGA-B64
|
R-PBGA-B64
|
Length |
13 mm
|
13 mm
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
64
|
64
|
Number of Words |
16777216 words
|
16777216 words
|
Number of Words Code |
16000000
|
16000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
16MX16
|
16MX16
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Equivalence Code |
BGA64,8X8,40
|
BGA64,8X8,40
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
3 V
|
3 V
|
Screening Level |
AEC-Q100
|
AEC-Q100
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Current-Max |
0.08 mA
|
0.08 mA
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
11 mm
|
11 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare S29GL256S10FHAV13 with alternatives
Compare S29GL256S10FHAV10 with alternatives