SA18A vs P6KE180 feature comparison

SA18A Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE180 Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description PLASTIC PACKAGE-2
Reach Compliance Code compliant not_compliant
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 22.1 V 198 V
Breakdown Voltage-Min 20 V 162 V
Breakdown Voltage-Nom 21.05 V 180 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 29.2 V 258 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-STD-202 UL RECOGNIZED
Rep Pk Reverse Voltage-Max 18 V 146 V
Reverse Current-Max 3 µA
Reverse Test Voltage 18 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 5 56
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 10

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