SA6.0AG vs SA6.0A-GT3 feature comparison

SA6.0AG Taiwan Semiconductor

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SA6.0A-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Base Number Matches 5 2
Package Description O-PALF-W2
Breakdown Voltage-Max 7.37 V
Breakdown Voltage-Min 6.67 V
Breakdown Voltage-Nom 7.02 V
Case Connection ISOLATED
Clamping Voltage-Max 10.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 6 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

Compare SA6.0AG with alternatives

Compare SA6.0A-GT3 with alternatives