SA6.0AG
vs
SA6.0A-GT3
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Base Number Matches
5
2
Package Description
O-PALF-W2
Breakdown Voltage-Max
7.37 V
Breakdown Voltage-Min
6.67 V
Breakdown Voltage-Nom
7.02 V
Case Connection
ISOLATED
Clamping Voltage-Max
10.3 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
JESD-30 Code
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
500 W
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
LONG FORM
Polarity
UNIDIRECTIONAL
Power Dissipation-Max
3 W
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
6 V
Surface Mount
NO
Technology
AVALANCHE
Terminal Form
WIRE
Terminal Position
AXIAL
Compare SA6.0AG with alternatives
Compare SA6.0A-GT3 with alternatives