SA6.0B vs SA6.0 feature comparison

SA6.0B Diodes Incorporated

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SA6.0 Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC GALAXY SEMI-CONDUCTOR CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 8.15 V 8.15 V
Breakdown Voltage-Min 6.67 V 6.67 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 11.4 V 11.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 600 µA 600 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 3 47
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Nom 7.41 V
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-15
Power Dissipation-Max 1 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 6 V
Reverse Test Voltage 6 V

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