SA75C-G vs P6KE9V1CP feature comparison

SA75C-G Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE9V1CP STMicroelectronics

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD STMICROELECTRONICS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 102 V 10 V
Breakdown Voltage-Min 83.3 V 8.65 V
Breakdown Voltage-Nom 92.65 V 9.1 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 134 V 17.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 75 V 7.8 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Diode Capacitance-Min 1550 pF
JESD-609 Code e0
Reverse Current-Max 50 µA
Terminal Finish Tin/Lead (Sn/Pb)

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