SI2308DS-T1-E3 vs RSR020N06HZGTL feature comparison

SI2308DS-T1-E3 Vishay Intertechnologies

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RSR020N06HZGTL ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ROHM CO LTD
Package Description , SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay ROHM Semiconductor
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 2 A 2 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W 1 W
Surface Mount YES YES
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 2 1
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.21 Ω
Feedback Cap-Max (Crss) 22 pF
JESD-30 Code R-PDSO-G3
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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