SI6562DQ
vs
SI6562DQ-T1
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
4.5 A
|
4.5 A
|
| Drain-source On Resistance-Max |
0.03 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G
|
|
| Number of Elements |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|