SM6T10A-E3/52
vs
JANTXV1N6461
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
DO-214AA
|
|
| Package Description |
R-PDSO-C2
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY
|
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
|
| Breakdown Voltage-Max |
10.5 V
|
|
| Breakdown Voltage-Min |
9.5 V
|
5.6 V
|
| Breakdown Voltage-Nom |
10 V
|
|
| Case Connection |
CATHODE
|
ISOLATED
|
| Clamping Voltage-Max |
18.6 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AA
|
|
| JESD-30 Code |
R-PDSO-C2
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
500 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
5 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
8.55 V
|
5 V
|
| Surface Mount |
YES
|
NO
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
6
|
| Reference Standard |
|
MIL-19500/551
|
|
|
|
Compare SM6T10A-E3/52 with alternatives
Compare JANTXV1N6461 with alternatives