SM6T6V8A vs SMBJ5.0C-GT3 feature comparison

SM6T6V8A General Instrument Corp

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SMBJ5.0C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GENERAL INSTRUMENT CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
Additional Feature LOW INDUCTANCE
Breakdown Voltage-Max 7.14 V 7.55 V
Breakdown Voltage-Min 6.45 V 6.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Package Description R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 5 V

Compare SM6T6V8A with alternatives

Compare SMBJ5.0C-GT3 with alternatives