SMAJ110A
vs
P4SMAJ110A-AU_R1_000A1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
PAN JIT INTERNATIONAL INC
|
| Package Description |
R-PDSO-C2
|
SMA, 2 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
|
| Breakdown Voltage-Max |
135 V
|
135 V
|
| Breakdown Voltage-Min |
122 V
|
122 V
|
| Breakdown Voltage-Nom |
128.5 V
|
128.5 V
|
| Clamping Voltage-Max |
177 V
|
177 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
400 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Rep Pk Reverse Voltage-Max |
110 V
|
110 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| JEDEC-95 Code |
|
DO-214AC
|
| Reference Standard |
|
AEC-Q101; IEC-61000-4-2; TS 16949
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SMAJ110A with alternatives
Compare P4SMAJ110A-AU_R1_000A1 with alternatives