SMAJ110A vs P4SMA110AHM3_A/I feature comparison

SMAJ110A EIC Semiconductor Inc

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P4SMA110AHM3_A/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 135 V 116 V
Breakdown Voltage-Min 122 V 105 V
Breakdown Voltage-Nom 128.5 V 110.5 V
Clamping Voltage-Max 177 V 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard TS-16949 AEC-Q101, UL RECOGNIZED
Rep Pk Reverse Voltage-Max 110 V 94 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 110 V 94 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 60 1
Factory Lead Time 8 Weeks
Date Of Intro 2019-02-07
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3.3 W
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

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