SMAJ16C-G vs SMAJ16C feature comparison

SMAJ16C-G Sangdest Microelectronics (Nanjing) Co Ltd

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SMAJ16C EIC Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD EIC SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 22.6 V 21.8 V
Breakdown Voltage-Min 17.8 V 17.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED TS-16949
Rep Pk Reverse Voltage-Max 16 V 16 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 3 41
Pbfree Code Yes
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature PRSM-MIN
Breakdown Voltage-Nom 19.8 V
Clamping Voltage-Max 28.8 V
Reverse Current-Max 1 µA
Reverse Test Voltage 16 V