SMAJ40A
vs
BZD27-C470,135
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
BRIGHTKING INC
|
NXP SEMICONDUCTORS
|
| Package Description |
SMA, 2 PIN
|
O-LELF-R2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
|
| Breakdown Voltage-Max |
49.1 V
|
|
| Breakdown Voltage-Min |
44.4 V
|
440 V
|
| Breakdown Voltage-Nom |
46.75 V
|
|
| Clamping Voltage-Max |
64.5 V
|
655 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-214AC
|
|
| JESD-30 Code |
R-PDSO-C2
|
O-LELF-R2
|
| Non-rep Peak Rev Power Dis-Max |
400 W
|
300 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
3.3 W
|
0.8 W
|
| Rep Pk Reverse Voltage-Max |
40 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Form |
C BEND
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
6
|
1
|
| Case Connection |
|
ISOLATED
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
NOT APPLICABLE
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
5 µA
|
| Terminal Finish |
|
TIN
|
|
|
|
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