SMAJ54AHE3G vs SMAJ54A-C feature comparison

SMAJ54AHE3G Taiwan Semiconductor

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SMAJ54A-C Secos Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SECOS CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Date Of Intro 2016-01-28
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 66.3 V 66.3 V
Breakdown Voltage-Min 60 V 60 V
Breakdown Voltage-Nom 63.15 V 63.15 V
Clamping Voltage-Max 87.1 V 87.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 54 V 54 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 2

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