SMAJ58AF1 vs 1SMA58AT3G feature comparison

SMAJ58AF1 Yangzhou Yangjie Electronics Co Ltd

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1SMA58AT3G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD ON SEMICONDUCTOR
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY HIGH RELIABILITY
Breakdown Voltage-Max 71.2 V 71.5 V
Breakdown Voltage-Min 64.4 V 64.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 400 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 0.5 W
Rep Pk Reverse Voltage-Max 58 V 58 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish TIN TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Pbfree Code Yes
Pin Count 2
Manufacturer Package Code 403D-02
Samacsys Manufacturer onsemi
Breakdown Voltage-Nom 67.8 V
Clamping Voltage-Max 93.6 V
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30

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Compare 1SMA58AT3G with alternatives