SMAJ58AHE3_A/H vs P4SMAJ58A feature comparison

SMAJ58AHE3_A/H Vishay Intertechnologies

Buy Now Datasheet

P4SMAJ58A Shanghai Lunsure Electronic Technology Co Ltd

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC SHANGHAI LUNSURE ELECTRONIC TECHNOLOGY CO LTD
Package Description SMA, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Factory Lead Time 8 Weeks
Date Of Intro 2019-02-06
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 71.2 V
Breakdown Voltage-Min 64.4 V
Breakdown Voltage-Nom 67.8 V
Clamping Voltage-Max 93.6 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3.3 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 58 V
Reverse Current-Max 1 µA
Reverse Test Voltage 58 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 9

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