SMBJ10-G vs TFMBJ10 feature comparison

SMBJ10-G Sangdest Microelectronics (Nanjing) Co Ltd

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TFMBJ10 Rectron Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD RECTRON LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 14.1 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code DO-214AA
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW ZENER IMPEDANCE
Clamping Voltage-Max 18.8 V
JESD-609 Code e3
Power Dissipation-Max 5 W
Terminal Finish Matte Tin (Sn)

Compare SMBJ10-G with alternatives

Compare TFMBJ10 with alternatives