SMBJ10.TF vs SMBJP6KE13CAE3TR feature comparison

SMBJ10.TF Semtech Corporation

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SMBJP6KE13CAE3TR Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMTECH CORP MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 11.1 V 12.4 V
Clamping Voltage-Max 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1.38 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 5
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Additional Feature TR, 7 INCH: 750
Breakdown Voltage-Max 13.7 V
Rep Pk Reverse Voltage-Max 11.1 V

Compare SMBJ10.TF with alternatives

Compare SMBJP6KE13CAE3TR with alternatives