SMBJ100-GT3 vs SMBJ100A/TR7 feature comparison

SMBJ100-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMBJ100A/TR7 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-J2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 141 V 123 V
Breakdown Voltage-Min 111 V 111 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code No
Part Package Code DO-214AA
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Power Dissipation-Max 1.38 W

Compare SMBJ100-GT3 with alternatives

Compare SMBJ100A/TR7 with alternatives