SMBJ10A.TF vs SMBJ10A-T3 feature comparison

SMBJ10A.TF Semtech Corporation

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SMBJ10A-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEMTECH CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 11.1 V 11.1 V
Clamping Voltage-Max 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Rohs Code No
Breakdown Voltage-Max 12.27 V
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 10 V

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