SMBJ120.TB vs SMBJ120AHE3/5B feature comparison

SMBJ120.TB Semtech Corporation

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SMBJ120AHE3/5B Vishay Semiconductors

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer SEMTECH CORP VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 133 V 133 V
Clamping Voltage-Max 214 V 193 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Additional Feature UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Max 147 V
Breakdown Voltage-Nom 140 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 120 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

Compare SMBJ120.TB with alternatives

Compare SMBJ120AHE3/5B with alternatives