SMBJ120A vs SMBJ120A/TR13 feature comparison

SMBJ120A MDE Semiconductor Inc

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SMBJ120A/TR13 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 147 V 147 V
Breakdown Voltage-Min 133 V 133 V
Breakdown Voltage-Nom 140 V
Clamping Voltage-Max 193 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 120 V 120 V
Reverse Current-Max 1 µA
Reverse Test Voltage 120 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 3
Pbfree Code No
Part Package Code DO-214AA
Package Description R-PDSO-J2
Pin Count 2
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W

Compare SMBJ120A with alternatives

Compare SMBJ120A/TR13 with alternatives