SMBJ120A vs SMBJ120R4G feature comparison

SMBJ120A PRO-AN Electronic Co Ltd

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SMBJ120R4G Taiwan Semiconductor

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer PRO-AN ELECTRONIC CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 140 V
Clamping Voltage-Max 193 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 120 V 120 V
Surface Mount YES YES
Base Number Matches 1 1
Rohs Code Yes
Package Description R-PDSO-C2
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 163 V
Breakdown Voltage-Min 133 V
Configuration SINGLE
Diode Element Material SILICON
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3 W
Technology AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

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Compare SMBJ120R4G with alternatives