SMBJ12C vs MSMBJ12CAE3/TR feature comparison

SMBJ12C General Instrument Corp

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MSMBJ12CAE3/TR Microchip Technology Inc

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown not_compliant
Breakdown Voltage-Max 16.9 V 14.7 V
Breakdown Voltage-Min 13.3 V 13.3 V
Clamping Voltage-Max 22 V 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 1
Rohs Code Yes
Package Description ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 14 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.38 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

Compare SMBJ12C with alternatives

Compare MSMBJ12CAE3/TR with alternatives