SMBJ12C vs MSMBJ12CAE3 feature comparison

SMBJ12C MDE Semiconductor Inc

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MSMBJ12CAE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MDE SEMICONDUCTOR INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN HIGH RELIABILITY
Breakdown Voltage-Max 15.4 V 14.7 V
Breakdown Voltage-Min 12.6 V 13.3 V
Breakdown Voltage-Nom 14 V
Clamping Voltage-Max 19.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity BIDIRECTIONAL BIDIRECTIONAL
Reference Standard MIL-STD-750, UL LISTED
Rep Pk Reverse Voltage-Max 12 V 12 V
Reverse Current-Max 1 µA
Reverse Test Voltage 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 3 2
Package Description ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
Factory Lead Time 40 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare SMBJ12C with alternatives

Compare MSMBJ12CAE3 with alternatives