SMBJ12CAM4 vs SMBJ12CTR feature comparison

SMBJ12CAM4 Taiwan Semiconductor

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SMBJ12CTR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH; 750
Breakdown Voltage-Max 14.7 V 16.3 V
Breakdown Voltage-Min 13.3 V 13.3 V
Breakdown Voltage-Nom 14 V 14.8 V
Clamping Voltage-Max 19.9 V 22 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 235
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.38 W
Rep Pk Reverse Voltage-Max 12 V 12 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 20
Base Number Matches 1 1
Part Package Code DO-214AA
Pin Count 2
Qualification Status Not Qualified

Compare SMBJ12CAM4 with alternatives

Compare SMBJ12CTR with alternatives