SMBJ13-T3 vs SMBJ13A feature comparison

SMBJ13-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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SMBJ13A International Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INTERNATIONAL SEMICONDUCTOR INC
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 17.6 V 15.9 V
Breakdown Voltage-Min 14.4 V 14.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 13 V 13 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 64
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 15.2 V
Clamping Voltage-Max 21.5 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Power Dissipation-Max 1 W
Reverse Current-Max 5 µA

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