SMBJ130A-M3/5B vs MASMBJ130AE3 feature comparison

SMBJ130A-M3/5B Vishay Semiconductors

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MASMBJ130AE3 Microchip Technology Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS MICROCHIP TECHNOLOGY INC
Part Package Code DO-214AA
Package Description R-PDSO-C2 SMBJ, 2 PIN
Pin Count 2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 159 V 159 V
Breakdown Voltage-Min 144 V 144 V
Breakdown Voltage-Nom 151.5 V
Clamping Voltage-Max 209 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Reference Standard UL RECOGNIZED IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 130 V 130 V
Reverse Current-Max 1 µA
Reverse Test Voltage 130 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 10
Base Number Matches 2 2
Factory Lead Time 40 Weeks

Compare SMBJ130A-M3/5B with alternatives

Compare MASMBJ130AE3 with alternatives