SMBJ170CA
vs
SMBJ170CAHE3TRTB
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
|
| Package Description |
R-PDSO-J2
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
|
|
| Breakdown Voltage-Max |
209 V
|
|
| Breakdown Voltage-Min |
189 V
|
|
| Breakdown Voltage-Nom |
199 V
|
|
| Clamping Voltage-Max |
275 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
| JEDEC-95 Code |
DO-214AA
|
|
| JESD-30 Code |
R-PDSO-J2
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
BIDIRECTIONAL
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
170 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
J BEND
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
|
|
|
|
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