SMBJ18 vs SMBJ18AHM3/H feature comparison

SMBJ18 JGD Semiconductors Co Ltd

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SMBJ18AHM3/H Vishay Intertechnologies

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer JGD SEMICONDUCTORS CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 22.1 V 21.05 V
Clamping Voltage-Max 32.4 V 29.2 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 18 V 18 V
Surface Mount YES YES
Base Number Matches 4 1
Rohs Code Yes
Package Description SMB, 2 PIN
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 22.1 V
Breakdown Voltage-Min 20 V
Configuration SINGLE
Diode Element Material SILICON
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 18 V
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ18 with alternatives

Compare SMBJ18AHM3/H with alternatives