SMBJ18-T3 vs SMBJ18A feature comparison

SMBJ18-T3 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

SMBJ18A Kuwait Semiconductor Co Ltd

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD FORWARD INTERNATIONAL ELECTRONICS LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 24.44 V
Breakdown Voltage-Min 20 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 18 V 18 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 2 63
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 21.05 V
Clamping Voltage-Max 29.2 V

Compare SMBJ18-T3 with alternatives

Compare SMBJ18A with alternatives