SMBJ200 vs SMBJ200A feature comparison

SMBJ200 Lite-On Semiconductor Corporation

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SMBJ200A Bourns Inc

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Part Life Cycle Code Transferred Active
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP BOURNS INC
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 247 V 247 V
Breakdown Voltage-Min 224 V 224 V
Breakdown Voltage-Nom 235.5 V 235.5 V
Clamping Voltage-Max 324 V 324 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 5 V
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.5 W 5 W
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Current-Max 5 µA
Reverse Test Voltage 200 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 12 4
Rohs Code Yes
Package Description SMB, 2 PIN
Factory Lead Time 16 Weeks
Samacsys Manufacturer Bourns
Additional Feature PRSM-MIN
JEDEC-95 Code DO-214AA
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard IEC-61000-4-2, 4-4, 4-5
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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