SMBJ200
vs
SMBJ200A-T
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
LITE-ON SEMICONDUCTOR CORP
|
RECTRON LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
247 V
|
|
| Breakdown Voltage-Min |
224 V
|
|
| Breakdown Voltage-Nom |
235.5 V
|
|
| Clamping Voltage-Max |
324 V
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| Forward Voltage-Max (VF) |
5 V
|
|
| JESD-30 Code |
R-PDSO-C2
|
|
| Non-rep Peak Rev Power Dis-Max |
600 W
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
1.5 W
|
|
| Rep Pk Reverse Voltage-Max |
200 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Test Voltage |
200 V
|
|
| Surface Mount |
YES
|
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
C BEND
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
12
|
1
|
| Rohs Code |
|
Yes
|
| JESD-609 Code |
|
e3
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SMBJ200 with alternatives
Compare SMBJ200A-T with alternatives