SMBJ24A vs SMBJ24A feature comparison

SMBJ24A JGD Semiconductors Co Ltd

Buy Now Datasheet

SMBJ24A International Semiconductor Inc

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer JGD SEMICONDUCTORS CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Nom 28.1 V 28.1 V
Clamping Voltage-Max 38.5 V 38.9 V
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 24 V 24 V
Surface Mount YES YES
Base Number Matches 1 1
Breakdown Voltage-Max 29.5 V
Breakdown Voltage-Min 26.7 V
Configuration SINGLE
Diode Element Material SILICON
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 1 W
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL

Compare SMBJ24A with alternatives

Compare SMBJ24A with alternatives