SMBJ26A vs SMBJ26A feature comparison

SMBJ26A STMicroelectronics

Buy Now Datasheet

SMBJ26A Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS TAIWAN SEMICONDUCTOR CO LTD
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 28.9 V 28.9 V
Breakdown Voltage-Nom 30.4 V 30.4 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-STD-750; MIL-STD-883
Rep Pk Reverse Voltage-Max 26 V 26 V
Reverse Current-Max 0.2 µA 1 µA
Reverse Test Voltage 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 2 14
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V
Forward Voltage-Max (VF) 3.5 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)

Compare SMBJ26A with alternatives

Compare SMBJ26A with alternatives