SMBJ26A vs SMBJ26AHE3/52 feature comparison

SMBJ26A General Instrument Corp

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SMBJ26AHE3/52 Vishay Semiconductors

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 33.2 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Clamping Voltage-Max 42.1 V 42.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 63 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Samacsys Manufacturer Vishay
Additional Feature UL RECOGNIZED, HIGH RELIABILITY
Breakdown Voltage-Nom 30.4 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 26 V
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

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