SMBJ26A-T vs SMBJ26A feature comparison

SMBJ26A-T Rectron Semiconductor

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SMBJ26A Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 31.9 V 31.9 V
Breakdown Voltage-Min 28.9 V 28.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 3 W
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 14
Package Description SMB, 2 PIN
Factory Lead Time 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Nom 30.4 V
Clamping Voltage-Max 42.1 V
Forward Voltage-Max (VF) 3.5 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reverse Current-Max 1 µA
Reverse Test Voltage 26 V
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ26A-T with alternatives

Compare SMBJ26A with alternatives