SMBJ3.3A vs SMBJ3V3HE3_B/I feature comparison

SMBJ3.3A Shenzhen Socay Electronics Corp Ltd

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SMBJ3V3HE3_B/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer SHENZHEN SOCAY ELECTRONICS CORP LTD VISHAY INTERTECHNOLOGY INC
Package Description SMB, 2 PIN SMB, 2 PIN
Reach Compliance Code unknown unknown
Additional Feature EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 6.5 V
Breakdown Voltage-Min 5.2 V 4.1 V
Breakdown Voltage-Nom 5.85 V
Clamping Voltage-Max 8 V 7.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Reference Standard IEC-61000-4-2, 4-4; UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 3.3 V 3.3 V
Reverse Current-Max 600 µA 200 µA
Reverse Test Voltage 3.3 V 3.3 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 3 1
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish Matte Tin (Sn)

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