SMBJ30A vs SMBJ30A-M3/5B feature comparison

SMBJ30A Zowie Technology Corp

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SMBJ30A-M3/5B Vishay Semiconductors

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer ZOWIE TECHNOLOGY CORP VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 36.8 V
Breakdown Voltage-Min 33.3 V
Breakdown Voltage-Nom 35.05 V
Clamping Voltage-Max 48.4 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL
Power Dissipation-Max 5 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 30 V
Reverse Current-Max 1 µA
Reverse Test Voltage 30 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare SMBJ30A with alternatives

Compare SMBJ30A-M3/5B with alternatives