SMBJ30A-T vs SMBJ30A-E3/52 feature comparison

SMBJ30A-T Rectron Semiconductor

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SMBJ30A-E3/52 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD VISHAY SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 36.8 V 36.8 V
Breakdown Voltage-Min 33.3 V 33.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 2 2
Pbfree Code Yes
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Samacsys Manufacturer Vishay
Breakdown Voltage-Nom 35.05 V
Clamping Voltage-Max 48.4 V
Forward Voltage-Max (VF) 3.5 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Reverse Current-Max 1 µA
Reverse Test Voltage 30 V
Time@Peak Reflow Temperature-Max (s) 30

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