SMBJ33A vs MSMBJ33A/TR feature comparison

SMBJ33A General Instrument Corp

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MSMBJ33A/TR Microchip Technology Inc

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer GENERAL INSTRUMENT CORP MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 42.2 V 40.6 V
Breakdown Voltage-Min 36.7 V 36.7 V
Clamping Voltage-Max 53.3 V 53.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-J2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 5 µA
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND J BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code No
Package Description PLASTIC, SMBJ, 2 PIN
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 38.65 V
JESD-609 Code e0
Moisture Sensitivity Level 1
Power Dissipation-Max 1.38 W
Rep Pk Reverse Voltage-Max 33 V
Terminal Finish TIN LEAD

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